Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
Identifieur interne : 000028 ( Russie/Analysis ); précédent : 000027; suivant : 000029Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure
Auteurs : RBID : Pascal:12-0429394Descripteurs français
- Pascal (Inist)
- Plasmonique, Domaine fréquence THz, Capteur mesure, Transistor mobilité électron élevée, Large bande, Détecteur onde submillimétrique, Fonction réponse, Circuit faible bruit, Electronique faible puissance, Courant photoélectrique, Effet non linéaire, Phénomène non linéaire, Plasmon, Densité porteur charge, Asymétrie, Phosphure d'indium, Composé binaire, 0707D, 0757K, InP, Haute impédance.
English descriptors
- KwdEn :
- Asymmetry, Binary compound, Charge carrier density, High electron mobility transistor, High impedance, Indium phosphide, Low noise circuit, Low-power electronics, Measurement sensor, Non linear effect, Non linear phenomenon, Photoelectric current, Plasmon, Plasmonics, Response function, Submillimeter wave detectors, THz range, Wide band.
Abstract
We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure.
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Pascal:12-0429394Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure</title><author><name sortKey="Watanabe, Takayuki" uniqKey="Watanabe T">Takayuki Watanabe</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Rsch. Inst. Electrical Commun., Tohoku University</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Rsch. Inst. Electrical Commun., Tohoku University</wicri:noRegion></affiliation></author><author><name sortKey="Boubanga Tombet, Stephane" uniqKey="Boubanga Tombet S">Stephane Boubanga Tombet</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Rsch. Inst. Electrical Commun., Tohoku University</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Rsch. Inst. Electrical Commun., Tohoku University</wicri:noRegion></affiliation></author><author><name sortKey="Tanimoto, Yudai" uniqKey="Tanimoto Y">Yudai Tanimoto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Rsch. Inst. Electrical Commun., Tohoku University</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Rsch. Inst. Electrical Commun., Tohoku University</wicri:noRegion></affiliation></author><author><name>YUYE WANG</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Science Inst., RIKEN</s1><s3>JPN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Advanced Science Inst., RIKEN</wicri:noRegion></affiliation></author><author><name sortKey="Minamide, Hiroaki" uniqKey="Minamide H">Hiroaki Minamide</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Science Inst., RIKEN</s1><s3>JPN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Advanced Science Inst., RIKEN</wicri:noRegion></affiliation></author><author><name sortKey="Ito, Hiromasa" uniqKey="Ito H">Hiromasa Ito</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Science Inst., RIKEN</s1><s3>JPN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Advanced Science Inst., RIKEN</wicri:noRegion></affiliation></author><author><name sortKey="Fateev, Denis" uniqKey="Fateev D">Denis Fateev</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Kotelnikov Inst. Radio Eng. Electron., RAS</s1><s3>RUS</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Kotelnikov Inst. Radio Eng. Electron., RAS</wicri:noRegion></affiliation></author><author><name sortKey="Popov, Viacheslav" uniqKey="Popov V">Viacheslav Popov</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Kotelnikov Inst. Radio Eng. Electron., RAS</s1><s3>RUS</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Kotelnikov Inst. Radio Eng. Electron., RAS</wicri:noRegion></affiliation></author><author><name sortKey="Coquillat, Dominique" uniqKey="Coquillat D">Dominique Coquillat</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>DLC2 Labs. University of Montpellier-CNRS</s1><s3>FRA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>DLC2 Labs. University of Montpellier-CNRS</wicri:noRegion><wicri:noRegion>DLC2 Labs. University of Montpellier-CNRS</wicri:noRegion></affiliation></author><author><name sortKey="Knap, Wojciech" uniqKey="Knap W">Wojciech Knap</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>DLC2 Labs. University of Montpellier-CNRS</s1><s3>FRA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>DLC2 Labs. University of Montpellier-CNRS</wicri:noRegion><wicri:noRegion>DLC2 Labs. University of Montpellier-CNRS</wicri:noRegion></affiliation></author><author><name sortKey="Meziani, Yahya" uniqKey="Meziani Y">Yahya Meziani</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Dept. de Fisica Aplicada, Universidad de Salamanca</s1><s2>Salamanca</s2><s3>ESP</s3><sZ>11 aut.</sZ></inist:fA14><country>Espagne</country><wicri:noRegion>Salamanca</wicri:noRegion></affiliation></author><author><name sortKey="Otsuji, Taiichi" uniqKey="Otsuji T">Taiichi Otsuji</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Rsch. Inst. Electrical Commun., Tohoku University</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Rsch. Inst. Electrical Commun., Tohoku University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0429394</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0429394 INIST</idno><idno type="RBID">Pascal:12-0429394</idno><idno type="wicri:Area/Main/Corpus">001632</idno><idno type="wicri:Area/Main/Repository">001291</idno><idno type="wicri:Area/Russie/Extraction">000028</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1101</idno><title level="j" type="abbreviated">Solid-state electron.</title><title level="j" type="main">Solid-state electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Asymmetry</term><term>Binary compound</term><term>Charge carrier density</term><term>High electron mobility transistor</term><term>High impedance</term><term>Indium phosphide</term><term>Low noise circuit</term><term>Low-power electronics</term><term>Measurement sensor</term><term>Non linear effect</term><term>Non linear phenomenon</term><term>Photoelectric current</term><term>Plasmon</term><term>Plasmonics</term><term>Response function</term><term>Submillimeter wave detectors</term><term>THz range</term><term>Wide band</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Plasmonique</term><term>Domaine fréquence THz</term><term>Capteur mesure</term><term>Transistor mobilité électron élevée</term><term>Large bande</term><term>Détecteur onde submillimétrique</term><term>Fonction réponse</term><term>Circuit faible bruit</term><term>Electronique faible puissance</term><term>Courant photoélectrique</term><term>Effet non linéaire</term><term>Phénomène non linéaire</term><term>Plasmon</term><term>Densité porteur charge</term><term>Asymétrie</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>0707D</term><term>0757K</term><term>InP</term><term>Haute impédance</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0></fA01><fA03 i2="1"><s0>Solid-state electron.</s0></fA03><fA05><s2>78</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Selected Papers from ISDRS 2011</s1></fA09><fA11 i1="01" i2="1"><s1>WATANABE (Takayuki)</s1></fA11><fA11 i1="02" i2="1"><s1>BOUBANGA TOMBET (Stephane)</s1></fA11><fA11 i1="03" i2="1"><s1>TANIMOTO (Yudai)</s1></fA11><fA11 i1="04" i2="1"><s1>YUYE WANG</s1></fA11><fA11 i1="05" i2="1"><s1>MINAMIDE (Hiroaki)</s1></fA11><fA11 i1="06" i2="1"><s1>ITO (Hiromasa)</s1></fA11><fA11 i1="07" i2="1"><s1>FATEEV (Denis)</s1></fA11><fA11 i1="08" i2="1"><s1>POPOV (Viacheslav)</s1></fA11><fA11 i1="09" i2="1"><s1>COQUILLAT (Dominique)</s1></fA11><fA11 i1="10" i2="1"><s1>KNAP (Wojciech)</s1></fA11><fA11 i1="11" i2="1"><s1>MEZIANI (Yahya)</s1></fA11><fA11 i1="12" i2="1"><s1>OTSUJI (Taiichi)</s1></fA11><fA12 i1="01" i2="1"><s1>AKTURK (Akin)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ILIADIS (Agis A.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Rsch. Inst. Electrical Commun., Tohoku University</s1><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="02"><s1>Advanced Science Inst., RIKEN</s1><s3>JPN</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Kotelnikov Inst. Radio Eng. Electron., RAS</s1><s3>RUS</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>DLC2 Labs. University of Montpellier-CNRS</s1><s3>FRA</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="05"><s1>Dept. de Fisica Aplicada, Universidad de Salamanca</s1><s2>Salamanca</s2><s3>ESP</s3><sZ>11 aut.</sZ></fA14><fA15 i1="01"><s1>Electrical and Computer Engineering Department, University of Maryland</s1><s2>College Park, MD</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA15><fA20><s1>109-114</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888</s2><s5>354000502043130190</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0429394</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid-state electronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="X"><s0>001D03G02B</s0></fC02><fC02 i1="03" i2="3"><s0>001B00G07D</s0></fC02><fC02 i1="04" i2="3"><s0>001B00G57K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Plasmonique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Plasmonics</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Domaine fréquence THz</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>THz range</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Capteur mesure</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Measurement sensor</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Captador medida</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>High electron mobility transistor</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Large bande</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Wide band</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Banda ancha</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Détecteur onde submillimétrique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Submillimeter wave detectors</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Fonction réponse</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Response function</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Función respuesta</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Circuit faible bruit</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Low noise circuit</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Circuito débil ruido</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Electronique faible puissance</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Low-power electronics</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Courant photoélectrique</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Photoelectric current</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Corriente fotoeléctrica</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Effet non linéaire</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Non linear effect</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Efecto no lineal</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Phénomène non linéaire</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Non linear phenomenon</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Fenómeno no lineal</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Plasmon</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Plasmon</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Plasmón</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Densité porteur charge</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Charge carrier density</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Concentración portador carga</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Asymétrie</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Asymmetry</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Asimetría</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>22</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Composé binaire</s0><s5>23</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Binary compound</s0><s5>23</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>0707D</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>0757K</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>InP</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Haute impédance</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>High impedance</s0><s4>CD</s4><s5>96</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0><s5>16</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0><s5>16</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>16</s5></fC07><fN21><s1>331</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>2011 International Semiconductor Device Research Conference (ISDRS 2011)</s1><s2>6</s2><s3>College Park, Maryland USA</s3><s4>2011-12-07</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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